Dual, 7.5V to 76V, Hot-Swap and
Diode ORing Controller
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
PS
= V
PWR
= 12V, V
FOSO
= 0, V
ENX
= V
ENY
= V
ENZ
= V
PWR
, and T
A
= T
J
= 0癈 to +85癈, unless otherwise noted. See the Typical
Operating Circuit for connections. Typical values are at T
A
= +25癈.) (Note 2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Package thermal resistances obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.
PWR, PS to GND ....................................................-0.3V to +85V
OUTA, OUTB, BP, RETRY to GND .........................-0.3V to +85V
BP to PS .................................................................-0.3V to +85V
BP to PWR ...............................................................-85V to +85V
OUTA, OUTB to PS..................................................-40V to +85V
SENSEA, SENSEB to PS...........................................-1V to +0.3V
SENSEA, SENSEB, CL, CB, OR to GND ................-0.3V to +85V
SENSEA, SENSEB to CL, CB, OR ...............................-5V to +5V
CL, CB, OR to PS .....................................................-1V to +0.3V
GATE1A, GATE2A, GATE1B, GATE2B,
GATEPS, GATEOR to GND .................................-0.3V to +85V
GATE1A, GATE2A to OUTA .....................................-0.3V to +8V
GATE1B, GATE2B to OUTB .....................................-0.3V to +8V
GATEPS to PS ..........................................................-0.3V to +8V
GATEOR to PWR ......................................................-0.3V to +8V
FAULTA, FAULTB to GND......................................-0.3V to +85V
ONA, ONB, FOSO, TCL,
TCB to GND...........-0.3V to the lesser of +85V or (V
BP
+ 0.3V)
TCL, TCB to GND........................................-0.3V to (V
PS
+ 0.3V)
ENX, ENY, ENZ to GND..........................................-0.3V to +85V
Continuous Power Dissipation
40-Pin TQFN (derate 37mW/癈 above +70癈) ...........2963mW
Thermal Resistance (Note 1)
?/DIV>
JA
.................................................................................28癈/W
?/DIV>
JC
...................................................................................1癈/W
Operating Temperature Range...............................0癈 to +85癈
Maximum Junction Temperature .....................................+150癈
Storage Temperature Range.............................-60癈 to +150癈
Lead Temperature (soldering, 10s).................................+300癈
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PS Voltage Range
V
PS
7.5
76
V
PS Supply Current
I
PS
7.5V d V
PWR
d 76V, V
PS
= V
PWR
,
V
ONA
= V
ONB
= 3V, no load
4.5
7
mA
PWR Voltage Range
V
PWR
7.5
76
V
PWR Supply Current
I
PWR
7.5V d V
PWR
d 76V, V
PS
= V
PWR
,
V
ONA
= V
ONB
= 3V, no load
400
600
礎
7.5V d V
PWR
d 12V, V
ENX
= V
ENY
= V
ENZ
= 0.4V, PS is open
5
10
PWR Shutdown Current
I
PWR_SHDN
12V d V
PWR
d 76V, V
ENX
= V
ENY
= V
ENZ
= 0.4V, PS is open
12
24
礎
PWR Standby Current
I
PWR_SB
7.5V d V
PWR
d 76V, V
PS
= V
PWR
,
V
ENX
= V
ENY
= V
ENZ
= 0.4V
50
75
礎
PS Undervoltage Lockout
Threshold
V
PS_UVLO
PS rising, V
ENX
= V
ENY
= V
ENZ
= 0,
V
ONA
= V
ONB
= V
BP
6.0
6.5
7.0
V
PS Undervoltage Lockout
Hysteresis
0.35
V
PWR Undervoltage Lockout
Threshold
V
PWR_UVLO
V
P WR
r i si
ng , P S = GN D , V
ON
A
= V
ON
B
= V
B P
6.0
6.5
7.0
V
PWR Undervoltage Lockout
Hysteresis
0.35
V
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